A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques
Journal
IEEE Journal of Solid-State Circuits
Journal Volume
36
Journal Issue
4
Pages
712-716
Date Issued
2001-04
Author(s)
Abstract
This paper reports a novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques. With two auxiliary pass transistors to dynamically control the bodies of transistors in the tag-compare portion of CAM cell, this SOI CAM cell has a fast tag-compare capability at a low supply voltage of 0.7 V as verified by the results from the two-dimensional semiconductor device simulation program MEDICI.
Subjects
CMOS; Content-addressable memory (CAM); Dynamic threshold (DTMOS); Low voltage; Partially depleted (PD) silicon-on-insulator (SOI); Tag cell; VLSI
Type
journal article