Closed-form physical model for VLSI bipolar devices considering energy transport
Resource
Electronics Letters
Journal
Electronics Letters
Pages
-
Date Issued
1994-02
Date
1994-02
Author(s)
DOI
0013-5194
Abstract
A closed-form physical model is reported for VLSI bipolar devices considering energy transport. Based on the model, for a base width of 810Å, the bipolar device, biased at Vcb= 2V, has a peak electron temperature of over 700K, which results in a 5% reduction in the collector current. © 1994, IEE. All rights reserved.
Subjects
Bipolar transistors; Semiconductor device models; VLSI
SDGs
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
00267198.pdf
Size
196.4 KB
Format
Adobe PDF
Checksum
(MD5):cc0d27cf6dc1888ea99284fa9d95df3e