BEOL-Compatible multiple metal-ferroelectric-metal (m-MFM) FETs designed for low voltage (2.5 V), high density, and excellent reliability
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Journal Volume
2020-December
Pages
4.6.1-4.6.4
Date Issued
2020
Author(s)
Yan M.-H
Wu M.-H
Huang H.-H
Chen Y.-H
Chu Y.-H
Wu T.-L
Yeh P.-C
Wang C.-Y
Lin Y.-D
Su J.-W
Tzeng P.-J
Sheu S.-S
Lo W.-C
Hou T.-H.
Abstract
An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %. © 2020 IEEE.
Other Subjects
Electron devices; Hafnium compounds; Zirconium compounds; Embedded memory; Ferroelectric switching; High currents; Memory window; Multiple metals; On-off ratio; SPICE modeling; Unit cell size; Ferroelectricity
Type
conference paper