Band structure and conductivity mechanism of bio-molecules binding on silicon nanowire
Date Issued
2010
Date
2010
Author(s)
Lin, Cheng-Wei
Abstract
Silicon nanowire ( SiNW ) field effect transistors ( FET ) are attracting much interest for their high sensitivity, real-time detection, reproducibility, label-free and using micro-electro-mechanical process. It is imperative for us to reveal the gate effect of FET and the behavior of SiNW binding molecules by simulation, which could help us realize the microscopic mechanisms.
The research bases on density functional theory packed in ATK software. Analyse three models: H-passivated Si(100) nanowire, Si(100) nanowire experienced gate voltage effect and Si(100) nanowire binding molecules by transmission spectrum, density of state, transmission percentages and eigenstates individually.
Simulation results show that H-passivated Si(100) nanowire as a perfect structure which can be observed by step-wise curve in transmission spectrum. It means that the channels at specific energy can be occupied 100% by electrons, and it is continuous in eigenstate structure; however, in H-passivated Si(100) nanowire with gate voltage effect and H-passivated Si(100) binding R-APTES molecules, both of them display reduction of coefficient in transmission spectrum and discontinuity in eigenstate which show that there exists equivalent relationship between gate voltage effect and binding molecules.
Subjects
biosensor
field effect transistor
silicon nanowire
binding molecules
gate voltage
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