Phase masks working in 157 nm wavelength fabricated by immersion interference photolithography
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
21
Journal Issue
6
Pages
3078-3081
Date Issued
2003-11
Author(s)
Abstract
We demonstrate that phase masks can be made from modified fused silica with a period of 180 nm and ∼8 mm long by using immersion interference photolithography. The fabrication process of the phase mask is optimized to generate the largest intensity ratio of diffracted ±1 to 0 order. The phase mask is demonstrated to produce a photoresist pattern with halved period (90 nm) when illuminated with a laser of 157 nm wavelength. The phase masks are also capable of generating two-dimensional patterns of holes and dots and serving as molds for imprint applications.
SDGs
Type
journal article