High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Journal

International Electron Devices Meeting, IEDM

Date Issued

2010

Author(s)

DOI

10.1109/IEDM.2010.5703388

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-79951815805&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/358249

Type

conference paper