High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response
Journal
International Electron Devices Meeting, IEDM
Date Issued
2010
Author(s)
Abstract
The record high peak mobility of ~1050 cm 2 /V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO 2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×10 4 . The low defective n + /p junction produced a record high on/off ratio of 2×10 5 , an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial ; tensile strain (0.08%) on ; channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.
Type
conference paper