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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Details
Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Journal
Optics Express
Journal Volume
28
Journal Issue
16
Pages
2796-23805
Date Issued
2020
Author(s)
Chow, Y.C.
Lee, C.
Wong, M.S.
Wu, Y.-R.
Nakamura, S.
Denbaars, S.P.
Bowers, J.E.
Speck, J.S.
YUH-RENN WU
DOI
10.1364/OE.399924
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85089132761&partnerID=40&md5=c4ca79cc97f4ee4fc36b7b96b37e35c8
https://scholars.lib.ntu.edu.tw/handle/123456789/559393
Type
journal article