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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Modeling dislocation-related leakage currents in GaN p-n diodes
Details
Modeling dislocation-related leakage currents in GaN p-n diodes
Journal
Journal of Applied Physics
Journal Volume
126
Journal Issue
24
Date Issued
2019
Author(s)
Robertson, C.A.
Qwah, K.S.
Wu, Y.-R.
Speck, J.S.
YUH-RENN WU
DOI
10.1063/1.5123394
URI
https://www.scopus.com/inward/record.url?eid=2-s2.0-85077759752&partnerID=40&md5=d2995185b9fefc8e943274af6ccbea26
https://scholars.lib.ntu.edu.tw/handle/123456789/559388
Type
journal article