Ultralow-contact-resistance graphene field-effect transistors fabricated with P-type solution doping
Journal
Applied Physics Express
Journal Volume
11
Journal Issue
7
Date Issued
2018
Author(s)
Abstract
We developed a polymer-free (PF) transfer method and examined the optimum annealing temperature and time for the polymer-free graphene to improve the graphene–metal contact. To further tune the work function of graphene to reduce contact resistance, we report solution doping combined with the PF method, and by using P-doped graphene, the contact resistance is markedly reduced to 24 Ω µm, which is an extremely low value in recent research. Photoemission spectroscopy was used to investigate the graphene/Au interface to explain the results of our contact resistance measurements, and the highest FET mobility of these low-contact devices was 14400 cm2 V%1 s%1 for intrinsic graphene in this study.
SDGs
Type
journal article