A Monolithically Integrated 120-GHz InGaAs/InAlAs/InP HEMT Amplifier
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
4
Journal Issue
6
Pages
194-195
Date Issued
1994
Author(s)
Lai, R.
Wang, H.
Tan, K.L.
Streit, D.C.
Liu, P.H.
Velebir, J.
Chen, S.
Berenz, J.
Pospieszalski, M.W.
Abstract
We report the design and gain performance for a two-stage 120-GHz monolithically integrated amplifier using 0.1-μm gate length pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP HEMT's. The two-stage amplifier demonstrated 10-12 dB gain measured between 119.5 to 123.5 GHz. To the best of our knowledge, this is the first demonstration of a monolithically integrated InP HEMT amplifier reported at D-band.
SDGs
Type
journal article