Determining the Film Thickness and Probing the Interface Structure with Characteristic Scanning Tunneling Spectroscopy
Resource
CHINESE JOURNAL OF PHYSICS, VOL. 44, NO. 4
Journal
CHINESE JOURNAL OF PHYSICS
Journal Volume
VOL. 44
Journal Issue
NO. 4
Pages
-
Date Issued
2006-08
Date
2006-08
Author(s)
Lu, S.M.
Shih, H.T.
Jiang, C.L.
Su, W.B.
Chang, C.S.
Tsong, Tien T.
DOI
20060927115959398596
Abstract
Structural and electronic properties of atomic-scale flat Ag films grown on Si(111)7×7
are investigated with scanning tunneling microscopy and spectroscopy. The spectrum for
each film thickness reveals features of transmission resonance and standing-wave states. The
spectral intensity or energy levels of these features vary with the film thickness, causing the
spectrum for each thickness to exhibit a unique fingerprint-like aspect. The spectra can thus
be used to discern the film thickness. In addition, the spectrum reveals a slight intensity
variation with the change of location on the film. This variation is due to a phase change
in the electronic reflection at the buried interface. Using this effect, the buried interfacial
structure can be probed as well.
Publisher
臺北市:國立臺灣大學物理系所
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
309.pdf
Size
184.17 KB
Format
Adobe PDF
Checksum
(MD5):51cfe48e3918ecd9a90fb6dfe9749783