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College of Science / 理學院
Physics / 物理學系
Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure
Details
Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
1
Date Issued
2006
Author(s)
Huang, M.L.
Chang, Y.C.
Chang, C.H.
Lin, T.D.
Kwo, J.
Wu, T.B.
MINGHWEI HONG
DOI
10.1063/1.2218826
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443454
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745801289&doi=10.1063%2f1.2218826&partnerID=40&md5=ca159645baaad406b9be1a493cbd4cb0
Type
journal article