High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
Resource
IEICE Trans. Electron. E84-C (10): 1312-1317
Journal
IEICE Trans. Electron. E84-C
Journal Issue
10
Pages
1312-1317
Date Issued
2001
Date
2001
Author(s)
Chiu, H. C.
Yang, S. C.
Chan, Y. J.
Lin, H. H.
Type
journal article