Impact of bias schemes on doherty power amplifiers
Resource
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Journal
Proceedings - IEEE International Symposium on Circuits and Systems
Pages
212-215
Date Issued
2005
Author(s)
Abstract
This paper investigates the performance of a 2.4- GHz CMOS two-way Doherty power amplifier with the different bias schemes for the auxiliary power device. For the conventional bias schemes, there are design tradeoffs in terms of power gain, gain flatness, P1dB, power-added efficiency, and third order harmonics. An adaptive bias scheme is proposed to bias the auxiliary device at class C for low power operation and at class AB for high power operation. It is shown that the adaptive bias scheme can achieve excellent performance without compromising some characteristics. © 2005 IEEE.
SDGs
Other Subjects
Adaptive bias; Auxiliary device; Auxiliary power; Class-AB; Design tradeoff; Doherty power amplifier; Excellent performance; Gain flatness; High-power operation; Low-power operation; Power gains; Power-added efficiency; Third order harmonics; Power amplifiers; Heterojunction bipolar transistors
Type
conference paper
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