Super-lamination HZO/ZrO2/HZO of Ferroelectric Memcapacitors with Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-destructive Readout
Journal
IEEE Electron Device Letters
ISSN
07413106
Date Issued
2024-01-01
Author(s)
Abstract
High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of 44 μC/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention > 104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications. © 1980-2012 IEEE.
Subjects
ferroelectric
HfZrO2
memcapacitor
morphotropic phase boundary
Publisher
Institute of Electrical and Electronics Engineers Inc.
Type
journal article