Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

Resource

Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong

Journal

Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong

Pages

-

Date Issued

2000-06

Date

2000-06

Author(s)

Lin, S.C.

Yuan, K.H.

Kuo, J.B.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00904213.pdf

Size

162.53 KB

Format

Adobe PDF

Checksum

(MD5):d1e99c6f69d1161adbd342c2421221d7