Study on the Monolithic Integration of Film Bulk Acoustic Wave Filters with Low Noise Amplifiers

With the rapid growth of communication market, system on chip (SOC) is a tendency of integration. However, passive devices are hard to be integrated owing to the natural loss of mechanism on Silicon. Film bulk acoustic wave filter (FBAW filter) has the potential to enable the fabrication of high quality filters integrated with RF CMOS circuit. In RF circuit, low noise amplifier (LNA) is an important component for amplifying the signal passed form RF band pass filter. So, the first destination of this project is to integrated FBAW filter with LNA by CMOS compatible process.
The present inventions comprise the integrating technique of film bulk acoustic wave filter and RF circuit. The film bulk acoustic filter is composed of some film bulk acoustic wave resonator and the characteristic of film bulk acoustic wave filter is depended on the number and area size of film bulk acoustic wave resonators. The film bulk acoustic wave resonator can be realized by CMOS compatible post process by the use of the top electrode metal layer of CMOS standard process as definition area of etching cavity or bottom electrode of film bulk acoustic wave resonator. By this method, the CMOS compatible film bulk acoustic wave resonator can be integrated with RF circuit for communication application.
In the achievement, prove that the monolithic integration of film bulk acoustic wave filters with low noise amplifiers is feasible. The most contribution that set up the fabrication-process compatible CMOS standard process of the FBAW filters, and the circuit is not hurt in the post process.
Second, set up the integrated simulating Platform of the FBAW Filters and RF circuit, and Finish the design and Simulation of monolithic integration chip of film bulk acoustic wave filters with low noise amplifiers.