Modulation depth enhancement in Si quantum dot doped SiOx waveguide based free-carrier modulator by adding a ring resonator
Journal
IEEE International Conference on Group IV Photonics GFP
Pages
201-202
Date Issued
2014
Author(s)
Abstract
The Si quantum dot doped SiO x waveguide based free-carrier absorption modulator with enhanced modulation depth from 52.5% to 63.5% is demonstrated by adding a ring resonator and inducing the electron-hole plasma to cause a resonance shift in the ring.
SDGs
Type
conference paper