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College of Science / 理學院
Physics / 物理學系
GaN on Si with nm-thick single-crystal Sc<inf>2</inf>O<inf>3</inf> as a template using molecular beam epitaxy
Details
GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
Journal
Journal of Crystal Growth
Journal Volume
311
Journal Issue
7
Pages
2006-2009
Date Issued
2009
Author(s)
Lee, W.C.
Lee, Y.J.
Kwo, J.
Hsu, C.H.
Lee, C.H.
Wu, S.Y.
Ng, H.M.
MINGHWEI HONG
DOI
10.1016/j.jcrysgro.2008.10.093
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443404
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-63549087803&doi=10.1016%2fj.jcrysgro.2008.10.093&partnerID=40&md5=75370af6f9a1d2b5be31e22b77384496
Type
journal article