The Study of Utilizing Surface Periodic Structure on Silicon Heterostructure Solar Cells
Date Issued
2014
Date
2014
Author(s)
Lin, Hung-Chou
Abstract
Cause the energy crisis, the solar photovoltaics(PV) technologies and conversion efficiency have been improved. The PV market is growing ever more noticeable year by year. Every kind of the solar cell are published on Journal or letters. However, crystalline silicon(c-Si)-base solar cell has a lots benefits that is like low cost, high yield quality and mass production. Silicon is the second abundant element on earth. The energy gap for silicon is very suitable to absorb energy in solar spectrum. Next decades, crystalline silicon (c-Si)-base solar cell still is the mainstream in the market.
In order to increasing the PV power generation,efficient light trapping has become an important area of research. This study focus on the short current density of the 1D gratings with different period and depth on the heterojuction with intrinsic thin-layer(HIT) solar cell wafer. We use the E-beam lithography to identify the exposure region and use Reactive Ion Etch to fabricate the 1D grating. We confirm the light width and depth by Atomic force microscope and Focus Ion beam.
After fabricated process, We measure the IV curve and external quantum efficiency. We find the best 1D grating period is 800nm. And the result shows that the period 800nm grating structure can promote the absorption in wavelength of 0.7-1.1μm. Compare with the flat solar cell, period 800nm grating s increase 14% current density.In addition, we change the arrangement like chessboard lattice and measure the IV curve. We find that the chessboard lattice could be enhanced 17%.
By Rsoft CAD-Layout Simulation, we simulate the different period gratings total reflection and inner electric field plot.After simulation, we compare the experiment and the simulation, and so that find that the simulation result almost fit in with experiment data.
Subjects
一維光柵
電子束微影
矽異質接面太陽能
光捕捉
吸收
SDGs
Type
thesis
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