Influence of doping iron ions into Cu(In,Ga)Se2 films in the morphology and photovoltaic properties of thin-film solar cells
Journal
Journal of Ceramic Processing Research
Journal Volume
18
Journal Issue
10
Pages
754-759
Date Issued
2017
Author(s)
Abstract
The iron-ion doped Cu(In, Ga)Se2 thin films were prepared on flexible stainless steel substrates via a non-vacuum spin-coating process. The influence of iron-ion doping in the morphology and properties of Cu(In, Ga)Se2 solar cells was investigated in detail. When the molar ratio of iron ions to the total amount of indium and gallium ions in Cu(In, Ga)Se2 was increased, the grain sizes of the Cu(In, Ga)Se2 thin films were reduced and the grain morphology became angular. Iron-ion doping in Cu(In, Ga)Se2 thin films substantially facilitated the formation of grain boundaries and additional shunt paths, leading to high probability of electron-hole recombination. As a result, the conversion efficiency of the prepared Cu(In, Ga)Se2 solar cells decreased dramatically due to iron-ion doping. ? 2017, Hanyang University. All rights reserved.
Subjects
CIGS solar cell
Electron-hole recombination
Flexible substrate
Selenization
Stainless steel
SDGs
Type
journal article