Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs
Resource
Semiconductor Device Research Symposium, 2001 International
Journal
2001 International Semiconductor Device Research Symposium, ISDRS 2001
Pages
490-493
Date Issued
2001
Author(s)
Abstract
In this paper, a fully analytical base transit time model for a SiGe-base HBTs with various shapes of germanium profiles in the base region considering both finite recombination lifetime and finite saturation velocity. The design of optimal Ge profile to minimize base transit time in the base can be achieved by using our model. The base structure for optimization has a linear ramp over the central portion of the base, similar to Winterton' s structures, and this Ge profile has been also used in Si/SiGe HBT fabrication.
Type
conference paper
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