Strain relaxation and quantum confinement in InGaN/GaN nanoposts
Resource
Nanotechnology 17, 1454–1458
Journal
Nanotechnology 17, 1454–1458
Pages
-
Date Issued
2006
Date
2006
Author(s)
Chen, Horng-Shyang
Yeh, Dong-Ming
Lu, Yen-Cheng
Chen, Cheng-Yen
Huang, Chi-Feng
Tang, Tsung-Yi
Yang, C.C.
Wu, Cen-Shawn
Chen, Chii-Dong
DOI
246246/2006111501211846
Abstract
Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography & inductively coupled plasma reactive ion etching. Significant blue shifts up to 130 meV in the photoluminescence (PL) spectrum were observed. The blue-shift range increases with decreasing post diameter. For nanoposts with significant strain relaxation, the PL spectral peak position becomes less sensitive to carrier screening. On the basis of the temperature-dependent PL & time-resolved PL measurements & a numerical calculation of the effect of quantum confinement, we conclude that the optical behaviours of the nanoposts are mainly controlled by the combined effect of 3D quantum confinement & strain relaxation.
Publisher
Taipei:National Taiwan University Dept Phys
Type
journal article
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