High-quality nanothick single-crystal Y2 O3 films epitaxially grown on Si (111): Growth and structural characteristics
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
26
Journal Issue
3
Pages
1124-1127
Date Issued
2008
Author(s)
Abstract
High-quality single-crystal nanothick Y2O3 films have been grown epitaxially on Si (111) despite a lattice mismatch of 2.4%. The films were electron beam evaporated from pure compacted powder Y2O3 target in ultrahigh vacuum. Y2O3 3nm thick exhibited a bright, sharp, streaky reconstructed (4×4) reflection high energy electron diffraction pattern. Structural studies carried out by x-ray diffraction with synchrotron radiation and high-resolution transmission electron microscopy show that the films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. Two Y2O3 domains of B-type Y2O3[21¯1¯]∥Si[112¯] and A-type Y2O3[21¯1¯]∥Si[21¯1¯] coexist in the initial film growth with B type predominating over A type in thicker films as studied using x-ray diffraction. The narrow full width at half maximum of 0.014° in the ω-rocking curve is the characteristic of excellent crystalline films. High-resolution transmission electron microscopy and fast Fourier transform analysis show atomically sharp interface and strain relaxation in thicker films.
SDGs
Type
journal article