High Open-circuit Voltage Tandem a-SiC:H p-i-n Solar Cells in Series
Date Issued
2009
Date
2009
Author(s)
Chu, Yi-Shiou
Abstract
The characteristics of a-SiC:H thin films, including structure, optical and electrical properties, were investigated first to choose the proper deposition parameters for solar cell fabrications in this thesis. Then it is introduced to the fabrication of amorphous silicon solar cells as the material of window layer to obtain higher open-circuit voltage due to its wide optical gap. Besides, to achieve sufficient open-circuit voltage solar cell as the power supply for electronic devices, the multi-junction tandem a-SiC:H p-i-n soalr cells are fabricated successfully. The open-circuit voltage of the double-junction and triple-junction tandem a-SiC:H solar cell could be increased to 1.54 V and 2.38 V, respectively. Furthermore, for the purpose to provide enough open-circuit voltage, ie 15V, for electronic devices, the processes of nine triple-junction solar cells connected in series have been developed. The open-circuit voltage is achieved to 16.6 V and the Voc and Jsc lost in series connection are 12.5 % and 17.5 %, respectively.
Subjects
High Open-circuit Voltage
Tandem
a-SiC:H
Solar Cell
Type
thesis
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