Tunability of the topological nodal-line semimetal phase in ZrSiX -type materials (X= S, Se, Te)
Journal
Physical Review B
Journal Volume
95
Journal Issue
16
Pages
161101-1 - 161101-6
Date Issued
2017
Author(s)
Hosen, M. M.
Dimitri, K.
Belopolski, I.
Maldonado, P.
Sankar, R.
Dhakal, N.
Dhakal, G.
Cole, T.
Oppeneer, P. M.
Kaczorowski, D.
Hasan, M. Z.
Durakiewicz, T.
Neupane, M.
Abstract
The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X=S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center (Γ) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-Γ-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling strength via the X anion.
Publisher
American Physical Society
Type
journal article