Dilute Sb Doping Yields Softer p-Type Bi2Te3 Thermoelectrics
Journal
Advanced Electronic Materials
Journal Volume
10
Journal Issue
6
Start Page
2300793
ISSN
2199160X
Date Issued
2024
Author(s)
Abstract
In this study, the Sb content within p-type Bi2Te3 by employing phase diagram engineering is strategically tuned. This method retains the advantages of Sb doping but mitigated the brittleness typically seen in high-Sb Bi0.5Sb1.5Te3 (BST). The as-constructed phase diagram demonstrates the asymmetrical homogeneity of (Bi, Sb)2Te3, guiding focus toward developing an optimized p-type (Bi2Te3)0.96(Sb2Te)0.04 with reduced Sb content. The resulting crystal of (Bi2Te3)0.96(Sb2Te)0.04 exhibit an exceptional peak zT of 1.3 at 303 K, surpassing the mechanical robustness of standard high-Sb BST. Additionally, it matches the energy conversion efficiency of traditional BST, achieving 2.3% at a temperature difference ΔT of 150 K. This significant advance makes (Bi2Te3)0.96(Sb2Te)0.04 a potential competitor to the well-established BST, thanks to its enhanced thermoelectric performance owing to the elevated carrier concentration and a less brittle nature due to the diluted Sb dopant. © 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
Subjects
Bi0.5 Sb1.5 Te3 (BST)
diluted Sb dopant
p-type Bi2 Te3
phase diagram engineering
SDGs
Publisher
John Wiley and Sons Inc
Description
論文編號: 2300793
Type
journal article