Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
Resource
IEEE Electron Device Letters 25 (9): 616-618
Journal
IEEE Electron Device Letters
Journal Volume
EDL-25
Journal Issue
9
Pages
616-618
Date Issued
2004-09
Author(s)
Chu, Wen-Ting
Lin, Hao-Hsiung
Tu, Yeur-Luen
Wang, Yu-Hsiung
Hsieh, Chia-Ta
Sung, Hung-Cheng
Lin, Yung-Tao
Tsai, Chia-Shiung
Wang, C.S.
Abstract
In the split-gate flash memory process, during poly oxidation, the bird's beak encroaches under the SiN film, especially along the poly grain boundary, and that will cause nonuniform floating-gate (FG) spacing, even bridging, which is an obstacle to cell shrinkage. We show that employing an ammonia treatment on the poly can nitridize the poly surface, thereby avoiding bird's beak bridging. After the ammonia treatment, FG spacing is quite uniform and can be improved from 0.09 to 0.03 μm. The XPS analysis on the ammonia treated poly shows the oxynitride thickness is less than 5 nm.
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Type
journal article
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