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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
Details
Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory
Resource
IEEE Electron Device Letters 25 (9): 616-618
Journal
IEEE Electron Device Letters
Journal Volume
EDL-25
Journal Issue
9
Pages
616-618
Date Issued
2004-09
Author(s)
Chu, Wen-Ting
Lin, Hao-Hsiung
Tu, Yeur-Luen
Wang, Yu-Hsiung
Hsieh, Chia-Ta
Sung, Hung-Cheng
Lin, Yung-Tao
Tsai, Chia-Shiung
Wang, C.S.
HAO-HSIUNG LIN
DOI
10.1109/LED.2004.833825
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/310421
SDGs
[SDGs]SDG6
Type
journal article
File(s)
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Name
56.pdf
Size
393.71 KB
Format
Adobe PDF
Checksum
(MD5):217e89a55739d3d4476382120f15551f
