Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
Journal
Applied Physics Letters
Journal Volume
87
Journal Issue
26
Pages
1-3
Date Issued
2005
Author(s)
Dhara, S.
Magudapathy, P.
Kesavamoorthy, R.
Kalavathi, S.
Nair, K.G.M.
Hsu, G.M.
Chen, K.H.
Santhakumar, K.
Soga, T.
Abstract
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50keV N+ implantation at 400°C and subsequent annealing at 900°C for 15min in N2 ambient. The crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2×1017cm−2. Temperature-dependent photoluminescence study showed a sharp direct band-to-band transition peak ∼3.32eV at temperature ⩽200K. The intermediate band-gap value, with respect to ∼3.4eV for hexagonal and ∼3.27eV for cubic phases of GaN, is indicative of the formation of mixed hexagonal and cubic phases.
Publisher
American Institute of Physics
Type
journal article