Self-organized InAs/GaAs quantum dots grown on (1 0 0) misoriented substrates by molecular beam epitaxy
Resource
Journal of Crystal Growth 188 (1-4): 383-386
Journal
Journal of Crystal Growth
Journal Issue
188
Pages
383-386
Date Issued
1998
Date
1998
Author(s)
Abstract
In this study, self-organized InAs quantum dots (QDs) were grown on (1 0 0) GaAs substrates with a 7° off-cut towards the (1 1 0) plane by using molecular beam epitaxy. QD with 2 ML nominal thickness grown on the vicinal substrate shows a 8.5 K photoluminescence line width of 27 meV and a dot density of 3 × 1011/cm2. © 1998 Elsevier Science B.V. All rights reserved.
Subjects
GaAs; InAs; Misoriented substrate; Molecular beam epitaxy; Quantum dots
SDGs
Other Subjects
Crystal orientation; Molecular beam epitaxy; Photoluminescence; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconductor growth; Substrates; Indium arsenide; Semiconductor quantum dots
Type
journal article
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