A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT
Journal
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Date Issued
2021
Author(s)
Abstract
In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The saturated output power (Psat) is 21.9/22.7 dBm, the peak power-added efficiency (PAEmax) is 28.9/32.6%, and the OP1dB and corresponding PAE (PAE1dB) are 21.8/22.6 dBm and 28/32% at 28/39 GHz, respectively. ? 2021 IEEE.
Event(s)
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Subjects
5G.
dual-band
GaAs
optimal matching contour
power amplifier
5G mobile communication systems
Gallium arsenide
III-V semiconductors
Power amplifiers
5g.
Dual Band
Matching networks
Measured results
Network design
Operating frequency bands
Optimal matching
Optimal matching contour
Power performance
Small signal gain
Semiconducting gallium
SDGs
Type
conference paper