Analysis of the Charge-Pumping Current Behavior of Channel Width Effect PD SOI NMOS Device Operating at Low Temperature

This thesis reported within the Channel Width effect of the silicon oxide insulating MOS transistors at low temperature via charge pumping technique, It can observe and compare the electrical properties of the Channel Width effect behavior at low and room temperature presented by Charge Pumping technique measurement.

The first chapter is introduces the characteristic of the SOI Device, and account for STI in the isolation of the SOI device structure, it also explain the Channel Width effect characteristic and the effect on SOI devices.

The second chapter is to measure the behavior of SOI devices with different channel width at room temperature presented at the Channel Width Effect within using Charge Pumping technique, It can observe the edge effect contributed to the total Charge Pumping Current.

The third chapter is repeated the same measurement method with using CP method. To compare the different channel width of SOI devices at low temperatures on the Channel Width effect by showing the impact of Charge Pumping Current, the edge effect of the SOI at low temperatures