III-V MOSFET's with advanced high 庥 dielectrics
Journal
ECS Transactions
Journal Volume
3
Journal Issue
2
Pages
425-440
Date Issued
2006
Author(s)
Abstract
Ga2O3(Gd2O3), the novel oxide, which was electron-beam evaporated from a gallium- gadolinium-garnet target in UHV, has unpinned the GaAs Fermi level. Systematic heat treatments under various gases and temperatures were studied to achieve low leakage currents of 10-8 - 10-9 A/cm2 and low Dit's in the range of 4-9 x 1010 cm-2V-1 for Ga2O3(Gd2O3) on InGaAs. By removing moisture from the oxide, thermodynamic stability of the Ga2O3(Gd2O3)/GaAs hetero-structures was achieved with high temperature annealing, which is needed for fabricating inversion-channel MOSFET's. The oxide remains amorphous and the interface remains intact with atomic smoothness and sharpness. The mechanism of Fermi-level unpinning and the band parameters in atomic layer deposition (ALD)-Al2O3 ex-situ deposited on InGaAs were studied and unveiled. The work of inversion- channel, depletion- mode, and power GaAs MOSFET's using Ga2O3 (Gd2O3) as the gate dielectric was briefly reviewed.
SDGs
Type
conference paper