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DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics
Journal
Jorurnal Vacuum Science and Technology B
Journal Volume
28
Journal Issue
3
Pages
Pages-C3H14
Date Issued
2010
Author(s)
Type
journal article