Electrical and optical properties of transparent conductive electrode based on patterned metal thin film by nanoshpere lithography
Date Issued
2010
Date
2010
Author(s)
Ho, Yu-Hsuan
Abstract
Transparent conductive electrode is one of the most important and basic components of the optoelectronics. Indium tin oxide (ITO) has been the most widely employed to fabricate the transparent electrode. But Indium metal itself that is the ingredient that comprises the largest portion in the ITO raw material has problems including extremely limited quantity, high price and unstable supply and demand. So ITO alternatives have become the subject of intense investigation for applications as transparent electrodes in optoelectronic devices.
In this work, we used the nanosphere lithography and annealing process to create the patterned Ag thin film to achieve high transparency and conductivity. The optimization between transparency and conductivity is always a trade-off. Our optimized cases (10-nm-thick silver, 590-nm period, and 54.69−58.341% filling factor*) allow for a transparency of 80−85% and a sheet resistance lower than 35Ω/□. Using the patterned Ag thin film as the anode (20-nm thick, 590-nm period, and 32.154% filling factor) coated with SAM (Self-Assembly Monolayer), we successfully fabricated Alq3-based OLED devices. Compared with traditional ITO-based devices, the patterned Ag anode had a turn-on voltage decreased by 0.4V, and the current efficiency was increased by 84%.
Subjects
Nanosphere lithography
transparent anode
organic light-emitting-diode
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-99-R94941044-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):56bedea44676fd1dd04a4863d6850ddb