Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
Journal
Applied Physics Letters
Journal Volume
104
Journal Issue
18
Date Issued
2014
Author(s)
Abstract
Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices.
Type
journal article