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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
Details
Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
Journal
Applied Physics Letters
Journal Volume
104
Journal Issue
18
Date Issued
2014
Author(s)
Lin, M.-Y.
Chen, Y.-H.
Wang, C.-H.
Su, C.-F.
Chang, S.-W.
Lee, S.-C.
Lin, S.-Y.
SI-CHEN LEE
DOI
10.1063/1.4875583
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84900411648&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/387426
Type
journal article