New model for the Staebler-Wronski effect in an amorphous silicon hydrogen alloy
Journal
Applied Physics Letters
Journal Volume
53
Journal Issue
21
Pages
2044-2046
Date Issued
1988
Author(s)
Tzeng, W.-J.
Abstract
The photoconductivity decay of an undoped amorphous silicon hydrogen alloy at different substrate temperatures is investigated. A model that attributes defect generation to recombinations through defects is used to describe the degradation kinetics. The typically observed 1/n power law decay with n close to integer can be easily explained using this model. The saturation behavior of photoconductivity suggests that the light-induced annealing process indeed exists near room temperature.
Type
journal article