A 68-83 GHz power amplifier in 90 nm CMOS
Journal
IEEE MTT-S International Microwave Symposium
Pages
437-440
Date Issued
2009
Author(s)
Abstract
A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14 dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P 1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.
SDGs
Type
conference paper