High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

Resource

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Journal

Fourth International Conference on Indium Phosphide and Related Materials

Pages

-

Date Issued

1992-04

Date

1992-04

Author(s)

Huang, Chao-Hsing

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00235671.pdf

Size

229.46 KB

Format

Adobe PDF

Checksum

(MD5):90dd1ad19de2ab339be6f335fdaa4d4c