3-10-GHz ultra-wideband low-noise amplifier utilizing miller effect and inductive shunt-shunt feedback technique
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
55
Journal Issue
9
Pages
1832-1843
Date Issued
2007
Author(s)
Abstract
In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves S 11 below -10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below -9 dB), flat S 21 of 24.6 plusmn 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only plusmn28 ps across the entire band). The measured 1-dB compression point (P 1 dB) and input third-order intermodulation point are -25.5 and -17 dBm, respectively, at 5.4 GHz.
SDGs
Type
journal article