High current gain AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
Resource
Solid-State Electronics 36 (2): 197-200
Journal
Solid-State Electronics
Journal Volume
36
Journal Issue
2
Pages
197-200
Date Issued
1993
Date
1993
Author(s)
Huang, Chen-Chih
Abstract
The fabrication and characteristics of Npn AlGaAs/GaAs single heterojunction bipolar transistors (HBTs) with an emitter edge-thinning structure have been studied. A new and simple selective wet etching method was used to make the emitter edge-thinning structure. The best device obtained shows a common emitter differential current gain of 8700. To our knowledge, this is the highest current gain of AlGaAs/GaAs HBT grown by MBE reported to date. The Gummel plot of this device is analyzed and compared with another HBT which has no emitter edge-thinning structure and was fabricated on the same epiwafer. It is found that the base current of the emitter edge-thinning device is one-tenth smaller than that of the controlled device. In low current region, the effect of emitter edge-thinning structure is even more significant. Because of the reduction of 2-kT surface recombination current, the emitter edge-thinning device reveals its intrinsic 1-kT base current in high current region. © 1993.
SDGs
Other Subjects
Electric current measurement; Fabrication; Heterojunctions; Molecular beam epitaxy; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Base current; Common emitter differential current gain; Emitter edge-thinning structure; Gummel plot; High current gain HBTs; Surface recombination current; Bipolar transistors
Type
journal article
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