Investigation of nonuniformity phenomenon in nanoscale SiO 2 and high-k gate dielectrics

Journal

Journal of Applied Physics

Journal Volume

112

Journal Issue

6

Date Issued

2012

Author(s)

DOI

10.1063/1.4754571

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84867071681&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/370336

Type

journal article