Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors
Details
Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors
Journal
Applied Physics Letters
Journal Volume
71
Journal Issue
20
Pages
2901-2903
Date Issued
1997
Author(s)
Lin, G.-R.
Pan, C.-L.
GONG-RU LIN
DOI
10.1063/1.120210
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500085
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031271743&doi=10.1063%2f1.120210&partnerID=40&md5=422eadb9c7f2167410d05821c77b18c3
Type
journal article