The Mechanisms of Electric-Field-Directed Growth of Silicon Nanowires

Electric-field-directed growth and self-assembly of undoped silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The nanowires are seen to respond to the presence of a localized DC electric field set up between adjacent electrode structures. It leads to improve silicon nanowires alignment and organization while transcending a trench. Simulation of the electric field distribution under two different electrode structures can reasonably explain the different growth results. Finally, the electric-field-directed growth of the undoped silicon nanowires was achieved successfully. The results of the in-situ electrical measurement of as-grown silicon nanowires are also presented.