Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes
Journal
Optics Letters
Journal Volume
24
Journal Issue
20
Pages
1407-1409
Date Issued
1999
Author(s)
Abstract
Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.
SDGs
Type
journal article