An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization
Resource
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Journal
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Pages
-
Date Issued
1995-10
Date
1995-10
Author(s)
Su, K.W.
Kuo, J.B.
DOI
N/A
Abstract
This paper reports an analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization. As verified by the PISCES results, the analytical model provides an accurate prediction of the IV characteristics of a 6H-SiC buried-channel NMOS device. According to the analytical model, the slope of delayed-turn-off region becomes smaller as the doping density of the buried channel increases.
Type
journal article
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