An analytical delayed-turn-off model for 6H-SiC buried-channel NMOS devices considering incomplete ionization

Resource

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Journal

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Pages

-

Date Issued

1995-10

Date

1995-10

Author(s)

Su, K.W.

Kuo, J.B.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00503361.pdf

Size

197.91 KB

Format

Adobe PDF

Checksum

(MD5):fe60f01fa00c7cc148f0ab8b5cee7ca8