A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
15
Journal Issue
7
Pages
448-450
Date Issued
2005
Author(s)
Abstract
A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's knowledge, this LNA demonstrates the lowest noise figure among the reported LNAs in standard CMOS processes above 20 GHz.
SDGs
Type
journal article