A locally matching technique for broadband flip-chip transition design
Journal
2002 IEEE MTT-S International Microwave Symposium
Journal Volume
3
Pages
1397-1400
Date Issued
2002
Author(s)
Wang, Chun-Long
Abstract
A locally matching technique is proposed in this paper to improve the wideband performance of a flip-chip transition. The gap width of the CPW line in the flip-chip bump pad region is enlarged for achieving larger inductance to compensate for the capacitance at the transition, making the approximate impedance close to 50 /spl Omega/. An equivalent circuit is derived from the frequency response of the transition simulated by Sonnet and is used to control the resonance frequency of the structure. With a properly chosen value of the enlarged width, the resonant dip can be controlled to improve return loss over a band from DC to 60 GHz. Measurement data of the scaled structure is in good agreement with the simulation results, which validates the proposed design idea.
SDGs
Type
conference paper
File(s)![Thumbnail Image]()
Loading...
Name
01012116.pdf
Size
292.37 KB
Format
Adobe PDF
Checksum
(MD5):0679194a6aeea62f8e3ef2432e9d8f43