Study of BixY3-xFe5O12 thin films grown by pulsed laser deposition
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
36
Journal Issue
3 SUPPL. A
Pages
1049-1053
Date Issued
1997
Author(s)
Liaw, J.-S.
Abstract
Epitaxial films of BixY3-xFe5O12 (Bi:YIG) have been grown on [111]-oriented gadolinium-gallium-garnet substrates, Gd3Ga5O12 (GGG), by pulsed laser deposition (PLD). Complete epitaxial substitution of the bismuth, Bi3Fe5O12 (BIG), was achieved at a growth temperature of 500°C and an O2 atmosphere of 200mTorr. The epitaxial nature of the films was indicated by the diffraction patterns from reflection high-energy electron diffraction (RHEED). X-ray diffraction (XRD) also showed that there were no peaks other than multiples of the (444) reflection. The Faraday rotation angle, θF, of these films increases linearly with the Bi content x yielding θ/x = -1.9 deg/μm at λ = 633 nm and T = 300K. From magnetooptical Kerr measurements (MOKE) we conclude that the uniaxial anisotropy constant. Ku, of the BIG film is positive, which could be due to the expansive stress caused by the difference in thermal expansion of the film and the substrate.
SDGs
Type
journal article