Engineering Ferroelectric HZO With n⁺-Si/Ge Substrates Achieving High 2P_r =84 μC/cm² and Endurance >1E11

Journal

IEEE Access

Journal Volume

12

Start Page

71598

End Page

71605

ISSN

2169-3536

Date Issued

2024

Author(s)

Zefu Zhao

Yun-Wen Chen

Yu-Rui Chen

DOI

10.1109/access.2024.3402120

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/720190

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Type

journal article